曹飞,王若斯,陶迪,刘元熙,李韶林,曹军,宋克兴,姜伊辉

• 1:西安理工大学材料科学与工程学院
• 2:导电材料与复合技术教育部工程研究中心
• 3:陕西省电工材料熔(浸)渗技术重点实验室
• 4:河南科技大学材料科学与工程学院

摘要(Abstract)：

铜基键合线能够满足高效、可靠的电子封装和连接需求，在电子和微电子行业中扮演着重要角色，被广泛应用于集成电路、芯片封装、LED封装以及无线通讯等领域。铜基键合线的优势在于其具有优良的导电、导热性能和力学性能，且具有显著的成本优势。但在实际应用过程中，铜线易于氧化，影响键合空气自由球特性，易对芯片铝焊盘造成损伤，同时键合界面会产生多种脆性金属间化合物，容易导致严重的键合界面结合问题。本文介绍了铜基键合线的键合界面调控研究现状，从键合界面金属间化合物的生长及演变、不同键合工艺及参数、铜线表面涂镀钯层等方面对键合界面的影响进行综述，展望了利用碱金属元素、稀土元素等进行微合金化改善铜线键合界面的应用发展前景，为优化铜基键合线、改善铜基键合线性能、获得更优异的键合界面提供新思路。

关键词(KeyWords)： 铜基键合线;键合界面;微合金化;金属间化合物

Abstract:

Keywords:

基金项目(Foundation): 国家自然科学基金(U21A2051,52322409)

作者(Author): 曹飞,王若斯,陶迪,刘元熙,李韶林,曹军,宋克兴,姜伊辉

DOI: 10.13289/j.issn.1009-6264.2024-0228

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